FDA2712 N-Channel UltraFET Trench MOSFET
April 2007
FDA2712
N-Channel UltraFET Trench MOSFET
250V, 64A, 34mΩ Features
RDS(on) = 29.2mΩ @VGS = 10 V, ID = 40A Fast switching speed Low gate charge High performance trench technology for extremely low RDS(on) High power and current handling capability RoHS compliant
UltraFET
tm
Description
This N-...
