2SC4381/4382
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1667/1668) sAbsolute maximum ratings
S...
2SC4381/4382
Silicon
NPN Triple Diffused Planar
Transistor (Complement to type 2SA1667/1668) sAbsolute maximum ratings
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg (Ta=25°C) Unit V V V A A W °C °C
Application : TV Vertical Output, Audio Output Driver and General Purpose
(Ta=25°C)
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions
External Dimensions FM20(TO220F)
4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5
2SC4381 2SC4382 150 150 6 2 1 25(Tc=25°C) 150 –55 to +150 200 200
2SC4381 2SC4382 10max
Unit
µA
V
VEB=6V IC=25mA VCE=10V, IC=0.7A IC=0.7A, IB=0.07A VCE=12V, IE=–0.2A VCB=10V, f=1MHz
10max 150min 200min 60min 1.0max 15typ 35typ
µA
V V
16.9±0.3
8.4±0.2
VCB=
150
200
13.0min
MHz pF
1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 2.4±0.2
sTypical Switching Characteristics (Common Emitter)
VCC (V) 20 RL (Ω) 20 IC (A) 1 VBB1 (V) 10 VBB2 (V) –5 IB1 (mA) 100 IB2 (mA) –100 ton (µs) 1.0typ tstg (µs) 3.0typ tf (µs) 1.5typ
2.54
3.9 B C E
I C – V CE Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s a t) (V ) 2
50 m A
V CE ( sat ) – I B Characteristics (Typical)
3
I C – V BE Temperature Characteristics (Typical)
2 (V C E =10V)
1.6 Collector Current I C (A)
2
1.2
Collector Current I C (A)
Temp
e Temp) 25˚C (Cas
0.8
I B =5mA/Step
0.4
I C = 0 .5
A
1A
100
2A
0
0
0
2
4
6
8
10
0
2
10
1000
0
0.5 Base-Emittor Voltage V B E (V)
–55˚C (Cas
1
125˚C
(Case
e Temp)
1
)
±0.2
0.8±0.2
a b
ø3....