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■■APPLICATION:Low Frequency Power Amplifier.
A614
—PNP silicon —
Power Regulator
■■MAXIMUM RATINGS(Ta=...
·ç¹âÐÀ¼¼Êõ×ÊÁÏ
■■APPLICATION:Low Frequency Power Amplifier.
A614
—
PNP silicon —
Power
Regulator
■■MAXIMUM RATINGS(Ta=25℃)
PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL RATING UNIT
VCBO VCEO VEBO IC PC TJ Tstg
-80 -55 -5 -3.0 25 150
V
V V A W ℃
1
TO-220 2.Collector 3.Emitter
1.Base
﹣55~150℃
■■ ELECTRICAL CHARACTERISTICS
PARAMETER DC Current Gain Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage SYMBOL hFE
(Ta=25℃)
TYP. MAX. UNIT TEST CONDITION VCE= -5V,Ic= -0.5A
MIN.
40
240 -50 -10 µA µA V V V -0.15 -0.5 V
ICBO IEBO BVCBO BVCEO BVEBO VCE(sat) -80 -55 -5
VCB= -50V,IE=0 VEB= -3V,Ic=0 Ic= -0.5mA,IE=0 Ic= -10mA,IB=0 IE= -0.5mA,Ic=0 Ic= -1A,IB= -0.1A
■■hFE Classification And Marking
Classification hFE
R 40~80
O 70~140
Y 120~240
Free Datasheet http://www.datasheet4u.com/
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