50N03

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 50N03 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Avalanche rated Pb-free plating; RoHS compliant Type 50N03 2 1 3 1) Product Summary V DS R DS(on),max ID 30 5 50 V mΩ A 50N03 1 2 3 Package Marking TO-252 50N03 TO-251 50N03 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.5 V, T C=25 °C V GS=4.5 V, T C=100 °C Pulsed drain current2) Avalanche current, single pulse 3) Avalanche energy, single pulse Reverse diode d v /dt Gate source voltage I D,pulse I AS E AS dv /dt V GS T C=25 °C T C=25 °C I D=35 A, R GS=25 Ω I D=50 A, V DS=24 V, di /dt =200 A/µs, T j,max=175 °C Value 50 50 50 50 350 50 60 6 ±20 mJ kV/µs V Unit A page 1 Free Datasheet http://www.datasheet4u.com/ Shenzhen Tuofeng Semiconductor Technology Co., Ltd 50N03 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Symbol Conditions P tot T j, T stg T C=25 °C Value 68 -55 ... 175 55/175/56 Unit W °C Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case SMD vers...