D1450

Transistor 2SD1450 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 4.0±0.2 3.0±0.2 0.7±0.1 s Features q q q Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation (Ta=25˚C) Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 25 20 12 1 0.5 300 150 –55 ~ +150 Unit V V V A A mW ˚C ˚C 1:Emitter 2:Collector 3:Base 1 2 3 1.27 1.27 2.54±0.15 EIAJ:SC–72 New S Type Package s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance ON resistanse (Ta=25˚C) Symbol ICBO VCBO VCEO VEBO hFE1*1 hFE2 VCE(sat) VBE(sat) fT Cob Ron*3 Conditions VCB = 25V, IE = 0 IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 2V, IC = 0.5A*2 VCE = 2V, IC = 1A*2 IC = 500mA, IB = 20mA*2 IC = 500mA, IB = 20mA*2 200 10 0.6 *2 min typ max 100 2.0±0.2 (Ta=25˚C) marking +0.2 0.45–0.1 s Absolute Maximum Ratings 15.6±0.5 Optimum for high-density mounting. Allowing supply with the radial taping. Low collector to emitter saturation voltage VCE(sat). Unit nA V V V 25 20 12 200 60 0.13 0.4 1.2 800 V V MHz pF Ω VCB = 10V, IE = –50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz Pulse measureme...