ME4410A

ME4410A N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION The ME4410A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. FEATURES ● RDS(ON)≦18mΩ@VGS=10V ● RDS(ON)≦20mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● DC/DC Converter ● Load Switch ● DSC PIN CONFIGURATION (SOP-8) Top View Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Thermal Resistance-Junction to Ambient* Thermal Resistance-Junction to Case TA=25℃ TA=70℃ TA=25℃ TA=70℃ Symbol VDSS VGSS ID IDM IS PD TJ RθJA RθJC 10 sec Steady State 30 ±20 Unit V V 10 8 40 2.3 2.5 1.6 -55 to 150 T≦10 sec Steady State 32 7.5 6 1.26 1.4 0.9 35 60 A A A W ℃ ℃/W ℃/W *The device mounted on 1in2 FR4 board with 2 oz cop...