DatasheetsPDF.com

K4106

2SK4106

Description

2SK4106 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK4106 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.4 Ω (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 m...

Toshiba

Download K4106 Datasheet

Similar Datasheet

K4100LS 2SK4100LS - Sanyo Semicon Device
K4101LS 2SK4101LS - Sanyo
K4106 2SK4106 - Toshiba
K4107 2SK4107 - Toshiba Semiconductor
K4108 2SK4108 - Toshiba Semiconductor
K4110 2SK4110 - Toshiba
K4111 2SK4111 - Toshiba
K4112 Field Effect Transistor - Toshiba
K4113 Field Effect Transistor Silicon N Channel MOS Type - Toshiba
K4115 2SK4115 - Toshiba Semiconductor

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)