P2804BDG

NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P2804BDG TO-252 (DPAK) Lead-Free D PRODUCT SUMMARY V(BR)DSS 40V RDS(ON) 28m ID 10A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range Lead Temperature ( /16” from case for 10 sec.) THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1 2 1 SYMBOL VDS VGS LIMITS 40 ±20 10 8 40 32 22 -55 to 150 275 UNITS V V TC = 25 °C TC = 100 °C ID IDM PD Tj, Tstg TL A W °C SYMBOL RθJc RθJA TYPICAL MAXIMUM 3 75 UNITS °C / W °C / W Pulse width limited by maximum junction temperature. Duty cycle ≤ 1 ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 0V, VGS = ±20V VDS = 32V, VGS = 0V VDS = 30V, VGS = 0V, TC = 125 °C VDS = 10V, VGS = 10V 40 40 1 1.5 2.5 ±250 1 10 nA µA A V LIMITS UNIT MIN TYP MAX 1 AUG-19-2004 Free Datasheet http://www.datasheet4u.com/ NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P2804BDG TO-252 (DPAK) Lead-Free Drain-Source On-S...