FDP80N06

FDP80N06 — N-Channel UniFETTM MOSFET FDP80N06 N-Channel UniFETTM MOSFET 60 V, 80 A, 10 mΩ Features RDS(on) = 8.5 mΩ (Typ.) @ VGS = 10 V, ID = 40 A Low Gate Charge (Typ. 57nC) Low Crss (Typ. 145pF) Fast Switching Improved dv/dt Capability RoHS Compliant November 2013 Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. D GDS TO-220 Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient, Max. G S (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) Ratings 60 ±20 80 65 320 4...