DatasheetsPDF.com

SGB15N120 Dataheets PDF



Part Number SGB15N120
Manufacturers Infineon
Logo Infineon
Description Fast IGBT
Datasheet SGB15N120 DatasheetSGB15N120 Datasheet (PDF)

SGP15N120 Fast IGBT in NPT-technology • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability SGP15N120 SGW15N120 C G E P-TO-220-3-1 (TO-220AB) P-TO-263-3-2 (D²-PAK) P-TO-247-3-1 (TO-263AB) (TO-247AC) • Complete product spectrum and PSpice Models : http://www.infineon..

  SGB15N120   SGB15N120


Document
SGP15N120 Fast IGBT in NPT-technology • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability SGP15N120 SGW15N120 C G E P-TO-220-3-1 (TO-220AB) P-TO-263-3-2 (D²-PAK) P-TO-247-3-1 (TO-263AB) (TO-247AC) • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SGP15N120 SGB15N120 SGW15N120 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C Gate-emitter voltage Avalanche energy, single pulse IC = 15A, VCC = 50V, RGE = 25Ω, start at Tj = 25°C Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Tj , Tstg -55...+150 260 °C 1) VCE 1200V IC 15A Eoff 1.5mJ Tj 150°C Package TO-220AB TO-263AB(D2PAK) TO-247AC Ordering Code Q67040-S4274 Q67040-S4275 Q67040-S4276 Symbol VCE IC Value 1200 30 15 Unit V A ICpul s VGE EAS tSC Ptot 52 52 ±20 85 10 198 V mJ µs W VGE = 15V, 100V≤ VCC ≤1200V, Tj ≤ 150°C 1) Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Jul-02 Free Datasheet http://www.datasheet4u.com/ Power Semiconductors SGP15N120 Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient SMD version, device on PCB 1) SGP15N120 SGW15N120 Max. Value Unit Symbol Conditions RthJC RthJA RthJA TO-220AB TO-247AC TO-263AB(D2PAK) 0.63 62 40 40 K/W Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 10 0 0 µ A VCE(sat) V G E = 15 V , I C = 15 A T j =2 5 ° C T j =1 5 0 ° C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 60 0 µ A , V C E = V G E V C E =1200V,V G E =0V T j =2 5 ° C T j =1 5 0 ° C Gate-emitter leakage current Transconductance Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current 2) Symbol Conditions Value min. 1200 typ. max. - Unit V 2.5 3 - 3.1 3.7 4 11 3.6 4.3 5 µA 200 800 100 1500 120 80 175 nC nH A nA S pF IGES gfs Ciss Coss Crss QGate LE IC(SC) V C E =0V, V G E =20V V C E = 20 V , I C = 15 A V C E = 25 V , V G E = 0V , f = 1 MH z V C C = 96 0 V, I C =1 5 A V G E = 15 V T O - 22 0A B TO-247AC V G E = 15 V , t S C ≤ 5 µ s 10 0 V ≤ V C C ≤ 12 0 0 V, T j ≤ 15 0 ° C - 1250 100 65 130 7 13 145 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70µm thick) copper area for collector connection. PCB is vertical without blown air. 2) Allowed number of short circuits: <1000; time between short circuits: >1s. 1) 2 Power Semiconductors 2 Jul-02 Free Datasheet http://www.datasheet4u.com/ SGP15N120 Switching Characteristic, Inductive Load, at Tj=25 °C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j =2 5 ° C , V C C = 80 0 V, I C = 1 5 A, V G E = 15 V /0 V , R G = 33 Ω , 1) L σ =1 8 0n H, 1) C σ = 4 0p F Energy losses include “tail” and diode reverse recovery. Symbol Conditions SGP15N120 SGW15N120 Value min. typ. 18 23 580 22 1.1 0.8 1.9 max. 24 30 750 29 1.5 1.1 2.6 mJ Unit ns Switching Characteristic, Inductive Load, at Tj=150 °C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j =1 5 0 ° C V C C = 80 0 V, I C = 15 A , V G E = 15 V /0 V , R G = 33 Ω , 1) L σ =1 8 0n H, 1) C σ = 4 0p F Energy losses include “tail” and diode reverse recovery. 38 30 652 31 1.9 1.5 3.4 46 36 780 37 2.3 2.0 4.3 mJ ns Symbol Conditions Value min. typ. max. Unit 1) Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E. Power Semiconductors 3 Jul-02 Free Datasheet http://www.datasheet4u.com/ SGP15N120 70A SGP15N120 SGW15N120 tp=2µs 15µs Ic 60A 50A 40A 30A 20A 10A 0A 10Hz TC=110°C 100A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 10A 50µs TC=80°C 200µs 1A 1ms Ic DC 0.1A 100Hz 1kHz 10kHz 100kHz 1V 10V 100V 1000V f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj ≤ 150°C, D = 0.5, VCE = 800V, VGE = +15V/0V, RG = 33Ω) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤ 150°C) 35A 200W 30A 175W 150W 125W 100W 75W 50W 25W 0W 25°C 25A 20A 15A 10A 5A 0A 25°C 50°C 75°C 100°C 125°C IC, COLLECTOR CURRENT .


SGP15N120 SGB15N120 IGW15N120H3


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)