Document
SGP15N120
Fast IGBT in NPT-technology
• 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability
SGP15N120 SGW15N120
C
G
E
P-TO-220-3-1 (TO-220AB)
P-TO-263-3-2 (D²-PAK) P-TO-247-3-1 (TO-263AB) (TO-247AC)
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SGP15N120 SGB15N120 SGW15N120 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C Gate-emitter voltage Avalanche energy, single pulse IC = 15A, VCC = 50V, RGE = 25Ω, start at Tj = 25°C Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Tj , Tstg -55...+150 260 °C
1)
VCE 1200V
IC 15A
Eoff 1.5mJ
Tj 150°C
Package TO-220AB TO-263AB(D2PAK) TO-247AC
Ordering Code Q67040-S4274 Q67040-S4275 Q67040-S4276
Symbol VCE IC
Value 1200 30 15
Unit V A
ICpul s VGE EAS tSC Ptot
52 52 ±20 85 10 198 V mJ µs W
VGE = 15V, 100V≤ VCC ≤1200V, Tj ≤ 150°C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Jul-02
Free Datasheet http://www.datasheet4u.com/
Power Semiconductors
SGP15N120
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient SMD version, device on PCB
1)
SGP15N120 SGW15N120
Max. Value Unit
Symbol
Conditions
RthJC RthJA RthJA TO-220AB TO-247AC TO-263AB(D2PAK)
0.63 62 40 40
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 10 0 0 µ A VCE(sat) V G E = 15 V , I C = 15 A T j =2 5 ° C T j =1 5 0 ° C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 60 0 µ A , V C E = V G E V C E =1200V,V G E =0V T j =2 5 ° C T j =1 5 0 ° C Gate-emitter leakage current Transconductance Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current
2)
Symbol
Conditions
Value min. 1200 typ. max. -
Unit
V
2.5 3 -
3.1 3.7 4 11
3.6 4.3 5 µA 200 800 100 1500 120 80 175 nC nH A nA S pF
IGES gfs Ciss Coss Crss QGate LE IC(SC)
V C E =0V, V G E =20V V C E = 20 V , I C = 15 A V C E = 25 V , V G E = 0V , f = 1 MH z V C C = 96 0 V, I C =1 5 A V G E = 15 V T O - 22 0A B TO-247AC V G E = 15 V , t S C ≤ 5 µ s 10 0 V ≤ V C C ≤ 12 0 0 V, T j ≤ 15 0 ° C
-
1250 100 65 130 7 13 145
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70µm thick) copper area for collector connection. PCB is vertical without blown air. 2) Allowed number of short circuits: <1000; time between short circuits: >1s.
1) 2
Power Semiconductors
2
Jul-02
Free Datasheet http://www.datasheet4u.com/
SGP15N120
Switching Characteristic, Inductive Load, at Tj=25 °C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j =2 5 ° C , V C C = 80 0 V, I C = 1 5 A, V G E = 15 V /0 V , R G = 33 Ω , 1) L σ =1 8 0n H, 1) C σ = 4 0p F Energy losses include “tail” and diode reverse recovery. Symbol Conditions
SGP15N120 SGW15N120
Value min. typ. 18 23 580 22 1.1 0.8 1.9 max. 24 30 750 29 1.5 1.1 2.6 mJ Unit
ns
Switching Characteristic, Inductive Load, at Tj=150 °C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j =1 5 0 ° C V C C = 80 0 V, I C = 15 A , V G E = 15 V /0 V , R G = 33 Ω , 1) L σ =1 8 0n H, 1) C σ = 4 0p F Energy losses include “tail” and diode reverse recovery. 38 30 652 31 1.9 1.5 3.4 46 36 780 37 2.3 2.0 4.3 mJ ns Symbol Conditions Value min. typ. max. Unit
1)
Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E.
Power Semiconductors
3
Jul-02
Free Datasheet http://www.datasheet4u.com/
SGP15N120
70A
SGP15N120 SGW15N120
tp=2µs 15µs
Ic
60A 50A 40A 30A 20A 10A 0A 10Hz TC=110°C
100A
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
10A
50µs
TC=80°C
200µs
1A
1ms
Ic
DC 0.1A
100Hz
1kHz
10kHz
100kHz
1V
10V
100V
1000V
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj ≤ 150°C, D = 0.5, VCE = 800V, VGE = +15V/0V, RG = 33Ω)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤ 150°C)
35A 200W 30A 175W 150W 125W 100W 75W 50W 25W 0W 25°C 25A 20A 15A 10A 5A 0A 25°C
50°C
75°C
100°C
125°C
IC, COLLECTOR CURRENT
.