Document
IPD85P04P4-07
OptiMOS®-P2 Power-Transistor
Product Summary V DS R DS(on) ID -40 7.3 -85 V mW A
Features • P-channel - Normal Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested PG-TO252-3-313
Type IPD85P04P4-07
Package PG-TO252-3-313
Marking 4P0407
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions T C=25°C, V GS=-10V T C=100°C, V GS=-10V2) Pulsed drain current1) Avalanche energy, single pulse1) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS I AS V GS P tot T j, T stg T C=25°C I D=-42.5A T C=25 °C Value Unit
Continuous drain current
ID
-85
A
-61 -340 30 -85 ±20 88 -55 ... +175 55/175/56 mJ A V W °C
Rev. 1.0
page 1
2011-04-18
Free Datasheet http://www.datasheet4u.com/
IPD85P04P4-07
Parameter
Symbol
Conditions min.
Values typ. max.
Unit
Thermal characteristics2) Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0V, I D= -1mA V GS(th) I DSS V DS=V GS, I D=-150µA V DS=-32V, V GS=0V, T j=25°C V DS=-32V, V GS=0V, T j=125°C2) Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=-20V, V DS=0V V GS=-10V, I D=-85A -40 -2.0 -3.0 -0.05 -4.0 -1 µA V 1.7 62 40 K/W
-
-20 5.3
-200 -100 7.3 nA mW
Rev. 1.0
page 2
2011-04-18
Free Datasheet http://www.datasheet4u.com/
IPD85P04P4-07
Parameter
Symbol
Conditions min.
Values typ. max.
Unit
Dynamic characteristics1) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics1) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current1) Diode pulse current1) Diode forward voltage Reverse recovery time1) Reverse recovery charge1)
1) 2)
C iss C oss Crss t d(on) tr t d(off) tf V DD=-20V, V GS=-10V, I D=-85A, R G=3.5W V GS=0V, V DS=-25V, f =1MHz
-
4681 1520 45 24 15 34 39
6085 2280 91 -
pF
ns
Q gs Q gd Qg V plateau V DD=-32V, I D=-85A, V GS=0 to -10V
-
26 13 69 -5.5
34 26 89 -
nC
V
IS I S,pulse V SD t rr Q rr
T C=25°C V GS=0V, I F=-85A, T j=25°C V R=-20V, I F=-50A, di F/dt =-100A/µs -
-1 48 54
-85 -340 -1.3 -
A
V ns nC
Defined by design. Not subject to production test.
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
Rev. 1.0
page 3
2011-04-18
Free Datasheet http://www.datasheet4u.com/
IPD85P04P4-07
1 Power dissipation P tot = f(T C); V GS ≤ -6V
2 Drain current I D = f(T C); V GS = -10V
100
100
80
80
60
60
P tot [W]
40
-I D [A]
40 20 20 0 0 50 100 150 200 0 0 50 100 150 200
T C [°C]
T C [°C]
3 Safe operating area I D = f(V DS); T C = 25 °C; D = 0 parameter: t p
1000
4 Max. transient thermal impedance Z thJC = f(t p) parameter: D =t p/T
101
1 µs
100
10 µs
0.5
100
100 µs
Z thJC [K/W]
-I D [A]
0.1
1 ms
10
-1
0.05
0.01
10 10-2
single pulse
1 0.1 1 10 100
10-3 10-6 10-5 10-4 10-3 10-2 10-1 100
-V DS [V]
t p [s]
Rev. 1.0
page 4
2011-04-18
Free Datasheet http://www.datasheet4u.com/
IPD85P04P4-07
5 Typ. output characteristics I D = f(V DS); T j = 25 °C parameter: V GS
6 Typ. drain-source on-state resistance R DS(on) = (I D); T j = 25 °C parameter: V GS
25
-10V
-5V
-5.5V
280
-7V
20
R DS(on) [mW]
-6V
210
-I D [A]
15
140
-6V
10 70
-5.5V -6.5V -5V -7V -10V
0 0 1 2 3 4 5 6
5 0 25 50 75
-V DS [V]
-I D [A]
7 Typ. transfer characteristics I D = f(V GS); V DS = -6V parameter: T j
8 Typ. drain-source on-state resistance R DS(on) = f(T j); I D = -85 A; V GS = -10 V
9
280
8
7
R DS(on) [mW ]
175 °C 25 °C -55 °C
210
-I D [A]
6
140
5
70
4
0 2 3 4 5 6 7 8
3 -60 -20 20 60 100 140 180
-V GS [V]
T j [°C]
Rev. 1.0
page 5
2011-04-18
Free Datasheet http://www.datasheet4u.com/
IPD85P04P4-07
9 Typ. gate threshold voltage V GS(th) = f(T j); V GS = V DS parameter: -I D
4
10 Typ. capacitances C = f(V DS); V GS = 0 V; f = 1 MHz
105
3.5 104 3
1500µA Ciss
-V GS(th) [V]
150µA
C [pF]
2.5
103
Coss
2 102 1.5
Crss
1 -60 -20 20 60 100 140 180
10
1
0
5
10
15
20
25
30
35
40
T j [°C]
-V DS [V]
11 Typical forward diode characteristicis IF = f(VSD) parameter: T j
103
12 Drain-source breakdown voltage V BR(DSS) = f(T j); I D = -1 mA
45 44 43 42
102
-V BR(DSS) [V]
175 °C 25 °C
41 40 39 38 37 36
-I F [A]
101 100 0 0.4 0.8 1.2 1.6
35 -60 -20 20 60 100 140 180
-V SD [V]
T j [°C]
Rev. 1.0
page 6
2011-04-18
Free Datasheet http://www.datasheet4u.com/
IPD85P04P4-07
13 Typ. gate charge V G.