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IPD800N06NG

Infineon
Part Number IPD800N06NG
Manufacturer Infineon
Description Power-Transistor
Published Jan 13, 2014
Detailed Description IPD800N06N G OptiMOS® Power-Transistor Features • For fast switching converters and sync. rectification • N-channel enh...
Datasheet PDF File IPD800N06NG PDF File

IPD800N06NG
IPD800N06NG

Overview
IPD800N06N G OptiMOS® Power-Transistor Features • For fast switching converters and sync.
rectification • N-channel enhancement - normal level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID 60 80 16 V mΩ A Type IPD800N06N G Package Marking PG-TO252-3 800N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) Value 16 11 64 43 6 ±20 Unit A I D...


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