H5TQ4G83MFR-xxC

4Gb DDR3 SDRAM 4Gb DDR3 SDRAM Lead-Free&Halogen-Free (RoHS Compliant) H5TQ4G83MFR-xxC H5TQ4G83MFR-xxI H5TQ4G83MFR-xxJ H5TQ4G63MFR-xxC H5TQ4G63MFR-xxI H5TQ4G63MFR-xxJ * Hynix Semiconductor reserves the right to change products or specifications without notice. Rev. 1.0/ Feb. 2012 1 Free Datasheet http://www.datasheet4u.com/ Revision History Revision No. 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 History Initial Release Ballout typo correction Package Dimension correction Add I-part Product type correction Update operation frequency Update IDD Update IDD Package Ball out (Top View) Correction (X8/16) Add J-part support 1.0 Pakage Dimension (Botton View) Correction (X8/16) Feb. 2012 Draft Date Apr. 2011 May. 2011 Jun. 2011 July. 2011 Oct. 2011 Oct. 2011 Nov. 2011 Nov. 2011 Feb. 2012 Page 5 to 6 , Pin Coordination is changed from 1-11 to 1-9 Page 1 to 3, add H5TQ4G83MFR-xxJ Page 32 to 33, Pin Coordination is changed from 1-11 to 1-9 Remark Rev. 1.0/ Feb. 2012 2 Free Datasheet http://www.datasheet4u.com/ Description The H5TQ4G83MFR-xxC,H5TQ4G63MFR-xxC, H5TQ4G83MFR-xxI, H5TQ4G63MFR-xxI, H5TQ4G83MFR-xxJ and H5TQ4G63MFR-xxJ are a 4,294,967,296-bit CMOS Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. Hynix 4Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges...