FDMC8360L N-Channel Shielded Gate Power Trench® MOSFET
June 2013
FDMC8360L
N-Channel Shielded Gate Power Trench® MOSFET
40 V, 80 A, 2.1 mΩ
Features
Shielded Gate MOSFET Technology Max rDS(on) = 2.1 mΩ at VGS = 10 V, ID = 27 A Max rDS(on) = 3.1 mΩ at VGS = 4.5 V, ID = 22 A High performance technology for extremely low rDS(on) Termination is Lead-f...
