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AOWF4S60 Dataheets PDF



Part Number AOWF4S60
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description Power Transistor
Datasheet AOWF4S60 DatasheetAOWF4S60 Datasheet (PDF)

AOW4S60/AOWF4S60 600V 4A α MOS TM Power Transistor General Description The AOW4S60 & AOWF4S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 700V 16.

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AOW4S60/AOWF4S60 600V 4A α MOS TM Power Transistor General Description The AOW4S60 & AOWF4S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 700V 16A 0.9Ω 6nC 1.5µJ 100% UIS Tested 100% Rg Tested TO-262 Top View Bottom View Top View TO-262F D Bottom View G G D S S D G S G AOW4S60 D S D G S AOWF4S60 Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G TC=25° C Power Dissipation B Derate above 25oC MOSFET dv/dt ruggedness Peak diode recovery dv/dt H Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D C TC=25° C TC=100° VGS ID IDM IAR EAR EAS PD dv/dt TJ, TSTG TL Symbol RθJA AOW4S60 600 ±30 4 3.7 16 1.6 38 77 83 0.67 100 20 -55 to 150 300 AOW4S60 65 0.5 1.5 AOWF4S60 Units V V 4* 3.7* A A mJ mJ 25 0.2 W W/ oC V/ns ° C ° C AOWF4S60 65 -5 Units ° C/W ° C/W ° C/W RθCS Maximum Case-to-sink A Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev 1: Jan 2012 www.aosmd.com Page 1 of 6 Free Datasheet http://www.datasheet4u.com/ AOW4S60/AOWF4S60 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol STATIC PARAMETERS BVDSS IDSS IGSS VGS(th) RDS(ON) VSD IS ISM Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage Maximum Body-Diode Pulsed CurrentC ID=250µA, VGS=0V, TJ=25° C C ID=250µA, VGS=0V, TJ=150° VDS=600V, VGS=0V VDS=480V, TJ=150° C VDS=0V, VGS=±30V VDS=5V,ID=250µA VGS=10V, ID=2A, TJ=25° C C VGS=10V, ID=2A, TJ=150° C IS=2A,VGS=0V, TJ=25° 600 650 2.9 VGS=0V, VDS=0 to 480V, f=1MHz VGS=0V, VDS=100V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=480V, ID=2A VGS=10V, VDS=400V, ID=2A, RG=25Ω IF=2A,dI/dt=100A/µs,VDS=400V IF=2A,dI/dt=100A/µs,VDS=400V 47.7 0.75 18 6.0 1.6 1.8 18 8 40 12 177 12 1.5 pF pF Ω nC nC nC ns ns ns ns ns A µC 700 10 3.5 0.78 2 0.81 263 21 17.1 1 ±100 4.1 0.9 2.4 4 16 V µA nΑ V Ω Ω V A A pF pF pF Parameter Conditions Min Typ Max Units Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Coss Co(er) Co(tr) Crss Rg Output Capacitance Effective output capacitance, energy related H Effective output capacitance, time related I Reverse Transfer Capacitance Gate resistance VGS=0V, VDS=100V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg Qgs Qgd tD(on) tr tD(off) tf trr Irm Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Peak Reverse Recovery Current Body Diode Reverse Recovery Charge IF=2A,dI/dt=100A/µs,VDS=400V A. The value of R θJA is measured with the device in a still air environment with T A =25° C. B. The power dissipation PD is based on TJ(MAX)=150° C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150° C, Ratings are based on low frequency and duty cycles to keep initial TJ =25° C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150° C. The SOA curve provides a single pulse ratin g. C G. L=60mH, IAS=1.6A, VDD=150V, Starting TJ=25° H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS. I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS. J. Wavesoldering only allowed at leads. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 1: Jan 2012 www.aosmd.com Page 2 of 6 Free Datasheet http://www.datasheet4u.com/ AOW4S60/AOWF4S60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 10V 8 7V 6 6V ID (A.


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