AOW4S60

AOW4S60/AOWF4S60 600V 4A α MOS TM Power Transistor General Description The AOW4S60 & AOWF4S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 700V 16A 0.9Ω 6nC 1.5µJ 100% UIS Tested 100% Rg Tested TO-262 Top View Bottom View Top View TO-262F D Bottom View G G D S S D G S G AOW4S60 D S D G S AOWF4S60 Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G TC=25° C Power Dissipation B Derate above 25oC MOSFET dv/dt ruggedness Peak diode recovery dv/dt H Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D C TC=25° C TC=100° VGS ID IDM IAR EAR EAS PD dv/dt TJ, TSTG TL Symbol RθJA AOW4S60 600 ±30 4 3.7 16 1.6 38 77 83 0.67 100 20 -55 to 150 300 AOW4S60 65 0.5 1.5 AOWF4S60 Units V V 4* 3.7* A A mJ mJ 25 0.2 W W/ oC V/ns ° C ° C AOWF4S60 65 -5 Units ° C/W ° C/W ° C/W RθCS Maximum Case-to-sink A Maximum Junct...