AOW410

AOW410 100V N-Channel MOSFET TM SDMOS General Description The AOW410 is fabricated with SDMOS trench technology that combines excellent RDS(ON) with low gate charge & low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. TM Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS= 7V) 100V 150A < 6.5mΩ < 7.5mΩ 100% UIS Tested 100% Rg Tested TO-262 Top View Bottom View D G D S S D G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B Power Dissipation A TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient AD Maximum Junction-to-Ambient Maximum Junction-to-Case C Maximum 100 ±25 150 108 405 12 10 50 125 333 167 1.9 1.2 -55 to 175 Units V V A TC=25°C TC=100°C TA=25°C TA=70°C ID IDM IDSM IAS,IAR EAS,EAR PD PDSM TJ, TSTG A A mJ W W °C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 12 54 0.35 Max 15 65 0.45 Units °C/W °C/W °C/W Rev0: July 2010 www.aosmd.com Page 1 of 7 Free Datasheet http://www.datasheet4u.com/ AOW410 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDS...