AOW15S60

AOW15S60/AOWF15S60 600V 15A α MOS TM Power Transistor General Description The AOW15S60 & AOWF15S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 700V 63A 0.29Ω 16nC 3.6µJ 100% UIS Tested 100% Rg Tested TO-262 Top View Bottom View Top View TO-262F Bottom View D G D S S D G S D G AOWF15S60 S D G G S AOW15S60 Absolute Maximum Ratings TA=25°C unless otherwise noted AOW15S60 Parameter Symbol Drain-Source Voltage VDS 600 Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G TC=25°C Power Dissipation B Derate above 25oC MOSFET dv/dt ruggedness Peak diode recovery dv/dt H Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D TC=25°C TC=100°C VGS ID IDM IAR EAR EAS PD dv/dt TJ, TSTG TL Symbol RθJA AOW15S60 65 0.5 0.6 208 1.67 100 20 -55 to 150 300 15 10 63 2.4 86 173 ±30 AOWF15S60 Units V V 15* 10* A A mJ mJ 27.8 0.22 W W/ oC V/ns °C °C AOWF15S60 65 -4.5 Units °C/W °C/W °C/W RθCS Maximum Case-to-sink ...