AOW12N50

AOW12N50/AOWF12N50 500V, 12A N-Channel MOSFET General Description The AOW12N50 & AOWF12N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 600V@150℃ 12A < 0.52Ω 100% UIS Tested 100% Rg Tested TO-262 Top View Bottom View Top View TO-262F Bottom View D G G D S S D G G D S S D G S Absolute Maximum Ratings TA=25°C unless otherwise noted AOW12N50 Symbol Parameter AOWF12N50 VDS Drain-Source Voltage 500 VGS Gate-Source Voltage ±30 12* T 12 =25°C C Continuous Drain ID Current 8.4 8.4* TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Units V V A A mJ mJ V/ns W W/ oC °C °C IDM IAR EAR EAS dv/dt PD TJ, TSTG TL Symbol RθJA RθCS RθJC AOW12N50 65 0.5 0.5 250 2 48 5.5 454 908 5 28 0.22 -55 to 150 300 AOWF12N50 65 -4.5 Single plused avalanche energy G Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Units °C/W °C/W °C/W Maximum Case-to-sink A Maximum Junction-to-Case * Drain current limited by maximum junc...