AOWF10N65

AOW10N65/AOWF10N65 650V,10A N-Channel MOSFET General Description The AOW10N65/AOWF10N65 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 750V@150℃ 10A < 1Ω 100% UIS Tested 100% Rg Tested TO-262 Top View Bottom View Top View TO-262F Bottom View D G D S S D G G D S S D G G S AOW10N65 AOWF10N65 Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter AOW10N65 AOWF10N65 Symbol Drain-Source Voltage VDS 650 Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G Peak diode recovery dv/dt TC=25° C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D TC=25° C TC=100° C VGS ID IDM IAR EAR EAS dv/dt PD TJ, TSTG TL Symbol RθJA RθCS AOW10N65 65 0.5 0.5 250 2 -55 to 150 300 AOWF10N65 65 -4.5 10 6.2 36 3.4 173 347 5 28 0.22 ±30 10* 6.2* Units V V A A mJ mJ V/ns W W/ oC ° C ° C Units ° C/W ° C/W ° C/W Maximum Case-to-sink A Maximum Junction-to-Case RθJC * Drain current lim...