AOW10N60

AOW10N60/AOWF10N60 600V,10A N-Channel MOSFET General Description The AOW10N60 & AOWF10N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 700V@150℃ 10A < 0.75Ω 100% UIS Tested 100% Rg Tested TO-262 Top View Bottom View Top View TO-262F D Bottom View G G D S S D G S G D S D G S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter AOW10N60 Symbol AOWF10N60 Drain-Source Voltage 600 VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G Peak diode recovery dv/dt TC=25° C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D C TC=25° TC=100° C VGS ID IDM IAR EAR EAS dv/dt PD TJ, TSTG TL Symbol RθJA RθCS AOW10N60 65 0.5 0.5 250 2 -55 to 150 300 AOWF10N60 65 -4.5 10 7.2 36 4.4 290 580 5 28 0.22 ±30 10* 7.2* Units V V A A mJ mJ V/ns W W/ oC ° C ° C Units ° C/W ° C/W ° C/W Maximum Case-to-sink A Maximum Junction-to-Case RθJC * Drain current limited by maximum j...