AOTF2910L

AOT2910L/AOB2910L/AOTF2910L 100V N-Channel MOSFET General Description The AOT2910L & AOB2910L & AOTF2910L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100V 30A / 22A < 24mΩ (* 23.5mΩ) < 33mΩ (* 32.5mΩ) 100% UIS Tested 100% Rg Tested Top View TO-220 TO-220F D TO-263 D2PAK D G D S AOTF2910L G D S AOB2910L G S S AOT2910L G Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol AOT2910L/AOB2910L VDS Drain-Source Voltage 100 Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Drain Current Avalanche Current C C AOTF2910L Units V V VGS TC=25° C TC=100° C TA=25° C TA=70° C ID IDM IDSM IAS EAS PD PDSM TJ, TSTG 50 25 TC=25° C 30 21 ±20 22 15.5 80 6.0 4.5 15 11 27 13.5 2.1 1.3 -55 to 175 A A A mJ W W ° C Avalanche energy L=0.1mH C Power Dissipation B Power Dissipation A TC=100° C TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case * Surface mount package TO263 Symbol t ≤ 10s Steady-State Stea...