AOTF15S60

AOT15S60L/AOB15S60L/AOTF15S60L/AOTF15S60 600V 15A α MOS TM Power Transistor General Description Product Summary The AOT15S60L & AOB15S60L & AOTF15S60L & AOTF15S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested 700V 63A 0.29Ω 16nC 3.6µJ TO-220 D Top View TO-220F TO-263 D D2PAK D AOT15S60L S D G AOTF15S60(L) Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Avalanche Current C IAR Repetitive avalanche energy C EAR Single pulsed avalanche energy G EAS TC=25°C Power Dissipation B Derate above 25oC PD MOSFET dv/dt ruggedness Peak diode recovery dv/dt H dv/dt Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J TL Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RθJA RθCS Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. S D G G AOB15S60L G S AOT15S60L/AOB15S60L 600 ±30 15 10...