AOTF15S60

AOT15S60/AOB15S60/AOTF15S60 600V 15A α MOS TM Power Transistor General Description TM The AOT15S60& AOB15S60 & AOTF15S60 have been fabricated using the advanced αMOS high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Features VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 700V 63A 0.29Ω 16nC 3.6µJ D G S Absolute Maximum Ratings TA=25°C unless otherwise noted AOT15S60/AOB15S60 Parameter Symbol Drain-Source Voltage 600 VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G TC=25°C Power Dissipation B Derate above 25oC MOSFET dv/dt ruggedness Peak diode recovery dv/dt H Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D C AOTF15S60L Units V V VGS TC=25°C TC=100°C ID IDM IAR EAR EAS PD dv/dt TJ, TSTG TL Symbol RθJA 208 1.67 15 10 ±30 15* 10* 63 2.4 86 173 27.8 0.22 100 20 -55 to 150 300 AOT15S60/AOB15S60 65 0.5 0.6 AOTF15S60L 65 -4.5 A A mJ mJ W W/ oC V/ns °C °C Units °C/W °C/W °C/W RθCS Maximum Case-to-sink A Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. 1/6 www.free...