N-Channel 30-V (D-S) MOSFET
Analog Power Freescale N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density tre...
Description
Analog Power Freescale N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOIC-8 saves board space Fast switching speed High performance trench technology
AM4434N AO4456/MC4456
PRODUCT SUMMARY VDS (V) rDS (on ) m(Ω) 6 @ VGS = 4.5V 30 8 @ VGS = 2.5V
ID (A) 18.6 16.1
1 2 3 4
8 7 6 5
AB SOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Parame te r Symbol Maximum Units Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 12 Continuous Drain Current Pulsed Drain Current
b a a
o
TA=25 C TA=70 C
o
o
ID IDM IS
18.6 15.7 60 2.9 3.1 2.2 -55 to 150 A W
o
A
Continuous Source Current (Diode Conduction) Power Dissipation
a
TA=25 C TA=70 C
o
o
PD TJ, Tstg
Operating Junction and Storage Temperature Range
C
THERMAL RESISTANCE RATINGS Parameter
Maximum Junction-to-Ambient
a
Symbol
t <= 10 sec Steady State R θJA
Maximum 40
80
Units
o o
C/W C/W
Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature
1
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Analog Power Freescale
AM4434N...
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