AO3419

AO3419 20V P-Channel MOSFET General Description The AO3419 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch applications. Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS= -10V) RDS(ON) (at VGS= -4.5V) RDS(ON) (at VGS= -2.5V) Typical ESD protection -20V -3.5A < 85mΩ < 102mΩ < 140mΩ HBM Class 2 SOT23 Top View Bottom View D D D G S G S G S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation B C Maximum -20 ±12 -3.5 -2.8 -17 1.4 0.9 -55 to 150 Units V V A VGS TA=25° C TA=70° C TA=25° C TA=70° C ID IDM PD TJ, TSTG W ° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 65 85 43 Max 90 125 60 Units ° C/W ° C/W ° C/W Rev 5: Nov 2011 www.aosmd.com Page 1 of 5 Free Datasheet http://www.datasheet4u.com/ AO3419 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-20V, VGS=0V C TJ=55° VDS=0V, VGS= ±12V VDS=VGS, ID=-250µΑ VGS=-4.5V, VDS=-5V VGS=-10V, ID=-3.5A TJ=125° C RDS(ON) Static Drain-Source On-Resistance VGS=-4.5V, ID=-3A VGS=-2.5V, ID=-1A VGS=-1.8V, ID=-0.5A gFS VSD IS Forward Tran...