20V N-Channel MOSFET
AO3414
20V N-Channel MOSFET
General Description
The AO3414 uses advanced trench technology to provide excellent RDS(ON)...
Description
AO3414
20V N-Channel MOSFET
General Description
The AO3414 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.
Features
VDS = 20V ID = 3A RDS(ON) < 62mΩ RDS(ON) < 70mΩ RDS(ON) < 85mΩ
(VGS = 4.5V) (VGS = 4.5V) (VGS = 2.5V) (VGS = 1.8V)
SOT23
Top View
Bottom View
D D
D
S G
G S
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID IDM
TA=25°C Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum 20 ±8 3 2.5 16 1.4 0.9
-55 to 150
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJL
Typ 70 100 63
Max 90 125 80
Units V V
A
W °C
Units °C/W °C/W °C/W
Rev 7: July 2010
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AO3414
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
20
V
IDSS Zero Gate Voltage Drain Current
VDS=20V, VGS=0V
TJ=55°C
1 µA
5
IGSS Gate-Body leakage current
VDS=0V, VGS=±8V
100 nA
VGS(th) Gate Threshold Voltage
VDS=VGS ID=250µA
0.4 0.7
1
V
ID(ON)
On state drain current
VGS...
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