P-Channel MOSFET
Analog Power Freescale
P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize High Cell Density proce...
Description
Analog Power Freescale
P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are DC-DC converters, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) Provides Higher Efficiency and Extends Battery Life Miniature SOT-23 Surface Mount Package Saves Board Space Fast switching speed High performance trench technology
AM2327P AO3411/ MC3411
PRODUCT SUMMARY VDS (V) rDS (on ) (OHM) 0.052 @ VGS = -4.5V -20 0.072 @ VGS = -2.5V 0.120 @ VGS = -1.8V
ID (A) -3.6 -3.1 -2.7
G D S
ABSOLUTE MAXIMUM RATINGS (T A = 25 C UNLESS OTHERWISE NOTED) Parame te r Symbol Ratings Units VDS Drain-Source Voltage -20 V VGS Gate-Source Voltage ± 8 Continuous Drain Current Pulsed Drain Current
b a a
o
TA=25 C TA=70 C
o
o
ID IDM IS
-3.6 -1.8 -10 ± 0.46 1.25 0.8 A W
o
A
Continuous Source Current (Diode Conduction) Power Dissipation
a
TA=25 C TA=70 C
o
o
PD TJ, Tstg
Operating Junction and Storage Temperature Range
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambienta t <= 5 sec Steady-State Symbol R THJA Maximum 100 150 Units
o
C/W
Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature
1
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