Bulletin PD -2.337 rev. C 05/01
HFA50PA60C
HEXFRED
Features
• • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IR...
Bulletin PD -2.337 rev. C 05/01
HFA50PA60C
HEXFRED
Features
Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions
TM
Ultrafast, Soft Recovery Diode
2
VR = 600V VF(typ.)* = 1.3V IF(AV) = 25A Qrr (typ.)= 112nC IRRM(typ.) = 4.5A trr(typ.) = 23ns
Benefits
Reduced RFI and EMI Reduced Power Loss in Diode and Switching
Transistor Higher Frequency Operation Reduced Snubbing Reduced Parts Count
1
3
di(rec)M/dt (typ.)* = 160A/µs
Description
International Rectifier's HFA50PA60C is a state of the art center tap ultra fast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 volts and 25 amps per Leg continuous current, the HFA50PA60C is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to "snap-off" during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HFA50PA60C is ...