DatasheetsPDF.com

HFA15PB60 Dataheets PDF



Part Number HFA15PB60
Manufacturers International Rectifier
Logo International Rectifier
Description Ultrafast/ Soft Recovery Diode
Datasheet HFA15PB60 DatasheetHFA15PB60 Datasheet (PDF)

Bulletin PD -2.340 rev. A 11/00 HFA15PB60 HEXFRED Features • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions TM Ultrafast, Soft Recovery Diode BASE CATHODE VR = 600V VF(typ.)* = 1.3V IF(AV) = 15A Qrr (typ.)= 80nC IRRM (typ.) = 4.0A 3 ANODE 2 4 2 Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation • Reduced Snubbing • Reduced Parts Count 1 CATHODE trr(typ.) = 19ns di(re.

  HFA15PB60   HFA15PB60



Document
Bulletin PD -2.340 rev. A 11/00 HFA15PB60 HEXFRED Features • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions TM Ultrafast, Soft Recovery Diode BASE CATHODE VR = 600V VF(typ.)* = 1.3V IF(AV) = 15A Qrr (typ.)= 80nC IRRM (typ.) = 4.0A 3 ANODE 2 4 2 Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation • Reduced Snubbing • Reduced Parts Count 1 CATHODE trr(typ.) = 19ns di(rec)M/dt (typ.)* = 160A/µs Description International Rectifier's HFA15PB60 is a state of the art ultra fast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 volts and 15 amps continuous current, the HFA15PB60 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to "snap-off" during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HFA15PB60 is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. TO-247AC (Modified) Absolute Maximum Ratings Parameter VR IF @ TC = 100°C IFSM IFRM PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Cathode-to-Anode Voltage Continuous Forward Current Single Pulse Forward Current Maximum Repetitive Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Max 600 15 150 60 74 29 -55 to +150 Units V A W C * 125°C 1 HFA15PB60 Bulletin PD-2.340 rev. A 11/00 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V BR VFM IRM CT LS Cathode Anode Breakdown Voltage Max Forward Voltage Max Reverse Leakage Current Junction Capacitance Series Inductance Min Typ Max Units 600 1.3 1.7 1.5 2.0 1.2 1.6 1.0 10 400 1000 25 50 12 V V µA pF nH Test Conditions IR = 100µA IF = 15A See Fig. 1 IF = 30A IF = 15A, TJ = 125°C See Fig. 2 VR = VR Rated TJ = 125°C, VR = 0.8 x VR RatedD Rated See Fig. 3 VR = 200V Measured lead to lead 5mm from package body Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified) Parameter t rr trr1 trr2 IRRM1 IRRM2 Qrr1 Qrr2 di(rec)M/dt1 di(rec)M/dt2 Reverse Recovery Time See Fig. 5, 10 Peak Recovery Current See Fig. 6 Reverse Recovery Charge See Fig. 7 Peak Rate of Fall of Recovery Current During tb See Fig. 8 Min Typ Max Units 19 42 74 4.0 6.5 80 220 188 160 60 120 6.0 10 180 600 Test Conditions IF = 1.0A, dif/dt = 200A/µs, VR = 30V ns TJ = 25°C TJ = 125°C IF = 15A TJ = 25°C A TJ = 125°C VR = 200V TJ = 25°C nC TJ = 125°C dif/dt = 200A/µs TJ = 25°C A/µs TJ = 125°C Thermal - Mechanical Characteristics Parameter Tlead! RthJC RthJA" RthCS# Wt Lead Temperature Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Thermal Resistance, Case to Heat Sink Weight Mounting Torque 6.0 5.0 Min Typ Max 300 1.7 40 Units °C K/W g (oz) Kg-cm lbf•in 0.25 6.0 0.21 12 10 ! 0.063 in. from Case (1.6mm) for 10 sec " Typical Socket Mount # Mounting Surface, Flat, Smooth and Greased 2 www.irf.com HFA15PB60 Bulletin PD-2.340 rev. A 11/00 100 10000 Reverse Current - IR (µA) 1000 100 10 1 0.1 T J = 150°C T J = 125°C Instantaneous Forward Current - IF (A) TJ = 150°C 10 TJ = 25°C 0.01 0 100 200 300 400 500 A 600 TJ = 125°C TJ = 25°C Reverse Voltage - V R (V) Fig. 2 - Typical Reverse Current vs. Reverse Voltage 100 A Junction Capacitance -CT (pF) T J = 25°C 1 1.0 A 1.2 1.4 1.6 1.8 2.0 2.2 2.4 ForwardVoltage VoltageDrop Drop- -V VFM (V) Forward (V) FM Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 10 10 100 A 1000 Reverse Voltage - V R (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 P DM t1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t2 0.1 0.05 0.02 0.01 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics www.irf.com 3 HFA15PB60 Bulletin PD-2.340 rev. A 11/00 100 25 I F = 30A I F = 15A 80 VR = 200V TJ = 125°C TJ = 25°C 20 I F = 5.0A I F = 30A I F = 15A I F = 5.0A trr- (ns) 40 Irr- ( A) VR = 200V TJ = 125°C TJ = 25°C A 60 15 10 20 5 0 100 di f /dt - (A/µs) 1000 0 100 A di f /dt - (A/µs) 1000 Fig. 5 - Typical Reverse Reco.


HFA140NJ60C HFA15PB60 HFA15TB60


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)