HF75-28S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF75-28S is Designed for
PACKAGE STYLE .380 STUD
.112x45...
HF75-28S
NPN SILICON RF POWER
TRANSISTOR
DESCRIPTION:
The ASI HF75-28S is Designed for
PACKAGE STYLE .380 STUD
.112x45° A
B
C E
ØC
FEATURES:
PG = 18 dB min. at 75 W/30 MHz IMD3 = -30 dBc max. at 75 W (PEP) Omnigold™ Metalization System
E B
H I J
D
#8-32 UNC-2A
G F E
MAXIMUM RATINGS
IC VCB VCE PDISS TJ T STG θ JC 10 A
DIM MINIMUM
inches / mm
MAXIMUM
inches / mm
60 V 35 V 140 W @ TC = 25 C -65 OC to +200 OC -65 C to +150 C 1.05 OC/W
O O O
A B C D E F G H I J
.220 / 5.59 .980 / 24.89 .370 / 9.40 .004 / 0.10 .320 / 8.13 .100 / 2.54 .450 / 11.43 .090 / 2.29 .155 / 3.94
.230 / 5.84 .385 / 9.78 .007 / 0.18 .330 / 8.38 .130 / 3.30 .490 / 12.45 .100 / 2.54 .175 / 4.45 .750 / 19.05
ORDER CODE: ASI10607
CHARACTERISTICS
SYMBOL
BV CEO BV CER BV EBO ICES hFE Cob GPE IMD3 IC = 50 mA IC = 50 mA IE = 10 mA VE = 28 V VCE = 5.0 V VCB = 28 V VCE = 25 V
TC = 25 OC
NONETEST CONDITIONS
RBE = 10 Ω
MINIMUM TYPICAL MAXIMUM
35 60 4.0 5
UNITS
V V V mA --pF dB
IC = 1.0 A f = 1.0 MHz ICQ = 3.2 A Vision = -8 dB Side Band = -16 dB f = 225 MHz Snd. = -7 dB
10
100 80
13.5
14.5 -55
PREF = 16 W
dBc
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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