HF50-12F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF50-12F is Designed for
PACKAGE STYLE .380 4L FLG
B .11...
HF50-12F
NPN SILICON RF POWER
TRANSISTOR
DESCRIPTION:
The ASI HF50-12F is Designed for
PACKAGE STYLE .380 4L FLG
B .112 x 45° A
FEATURES:
PG = 16 dB min. at 50 W/30 MHz IMD3 = -30 dBc max. at 30 W (PEP) Omnigold™ Metalization System
F
E B
C D E
C E
Ø.125 NOM. FULL R J .125
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ T STG θ JC 12.0 A 36 V 18 V 3.5 V 183 W @ TC = 25 C -65 OC to +200 OC -65 OC to +150 OC 1.05 OC/W
O
DIM A B C D E F G H I J .240 / 6.10 .004 / 0.10 .085 / 2.16 .160 / 4.06 MINIMUM
inches / mm
G
H I
MAXIMUM
inches / mm
.220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64
.230 / 5.84 .730 / 18.54 .980 / 24.89 .385 / 9.78 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .255 / 6.48
ORDER CODE: ASI10596
CHARACTERISTICS
SYMBOL
BV CBO BV CES BV CEO BV EBO ICES hFE COB GP ηC IC = 50 mA IC = 100 mA IC = 50 mA IE = 10 mA VCE = 15 V VCE = 5.0 V
TC = 25 OC
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
36 36 18 3.5 10
UNITS
V V V V mA --pF dB
IC = 5.0 A f = 1.0 MHz PIN = 7.0 W f = 50 MHz
10
--300
VCB = 12.5 V VCE = 12.5 V POUT = 50 W(PEP)
10 55
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without
REV. A
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