HF250-50
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF250-50 is Designed for
PACKAGE STYLE 0.500 4L FLG
.112...
HF250-50
NPN SILICON RF POWER
TRANSISTOR
DESCRIPTION:
The ASI HF250-50 is Designed for
PACKAGE STYLE 0.500 4L FLG
.112x45° A FULL R L
FEATURES:
PG = 14 dB min. at 220 W/30 MHz IMD3 = 150 dBc max. at 220 W (PEP) Omnigold™ Metalization System
C B
E
C
Ø.125 NOM.
B
D G F
E
E H
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ T STG θ JC
O O
I J
K
40 A 110 V 55 V 4.0 V 140 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 0.40 OC/W
O O O
DIM A B C D E F G H I J K L
MINIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59 .125 / 3.18 .245 / 6.22 .720 / 18.28 .125 / 3.18 .970 / 24.64 .495 / 12.57 .003 / 0.08 .090 / 2.29 .150 / 3.81 .980 / 24.89
.230 / 5.84 .255 / 6.48 .7.30 / 18.54 .980 / 24.89 .505 / 12.83 .007 / 0.18 .110 / 2.79 .175 / 4.45 .280 / 7.11 1.050 / 26.67
ORDER CODE: ASI10615
CHARACTERISTICS
SYMBOL
BV CEO BV CES BV EBO ICEO ICES hFE Cob GP IMD3 ηC IC = 200 mA IC = 200 mA IE = 20 mA VCE = 30 V VCE = 60 V VCE = 6.0 V VCB = 50 V
TC = 25 OC
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
55 110 4.0 10 10
UNITS
V V V mA mA --pF dB dBc %
IC = 10 A f = 1.0 MHz
15
45 360
14.5 VCE = 50 V ICQ = 150 mA POUT = 250 W(PEP) 37 -30
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
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