HF150-50F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF150-50F is Designed for
PACKAGE STYLE .500 4L FLG
.11...
HF150-50F
NPN SILICON RF POWER
TRANSISTOR
DESCRIPTION:
The ASI HF150-50F is Designed for
PACKAGE STYLE .500 4L FLG
.112x45° A FULL R L
FEATURES:
PG = 14 dB min. at 150 W/30 MHz IMD3 = 100 dBc max. at 150 W (PEP) Omnigold™ Metalization System
C B
E B
D G F
C
Ø.125 NOM.
E
E H
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ T STG θ JC 10 A
DIM MINIMUM
inches / mm
I J
K
MAXIMUM
inches / mm
110 V 55 V 4.0 V 233 W @ TC = 25 C -65 OC to +200 OC -65 C to +150 C 0.75 OC/W
O O O
A B C D E F G H I J K L
.220 / 5.59 .125 / 3.18 .245 / 6.22 .720 / 18.28 .125 / 3.18 .970 / 24.64 .495 / 12.57 .003 / 0.08 .090 / 2.29 .150 / 3.81 .980 / 24.89
.230 / 5.84 .255 / 6.48 .7.30 / 18.54 .980 / 24.89 .505 / 12.83 .007 / 0.18 .110 / 2.79 .175 / 4.45 .280 / 7.11 1.050 / 26.67
ORDER CODE: ASI10612
CHARACTERISTICS
SYMBOL
BV CBO BV CES BV CEO BV EBO ICEO ICES hFE Cob GP IMD3 ηC IC = 100 mA IC = 100 mA IC = 100 mA IE = 10 mA VCE = 30 V VCE = 60 V VCE = 6 V VCB = 50 V
TC = 25 OC
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
110 110 55 4.0 5 5
UNITS
V V V V mA mA --pF dB dBc %
IC = 1.4 A f = 1.0 MHz
18
43.5 220
14 VCE = 50 V ICQ = 100 mA POUT = 150 W (PEP) 37 -30
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, C...
