Document
SK102 thru SK1020
®
Pb Free Plating Product
SK102 thru SK1020
SMC/DO-214AB
Pb
10.0 Ampere Surface Mount Schottky Barrier Rectifier
Unit: inch (mm)
Features
For surface mounted application Metal to silicon rectifier, majority carrier conduction Low forward voltage drop Easy pick and place High surge current capability Plastic material used carriers Underwriters Laboratory Classification 94V-0 Epitaxial construction High temperature soldering: 260oC / 10 seconds at terminals
.128(3.25) .108(2.75)
.280(7.11) .260(6.60)
.012(.305) .006(.152)
Mechanical Data
Case: Molded plastic Terminals: Pure tin plated, lead free. Polarity: Indicated by cathode band Packaging: 16mm tape per EIA STD RS-481 Weight: 0.1 gram
.050(1.27) .030(0.76) .320(8.13) .305(7.75)
.103(2.62) .079(2.00)
.008(.203) .002(.051)
Rating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number
Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current See Fig. 1 Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage @10A Maximum D.C. Reverse Current @ Tc=25 oC o at Rated DC Blocking Voltage @ Tc=125 C Typical Junction Capacitance (Note 2) Typical Thermal Resistance (Note 1) Operating Junction Temperature Range Storage Temperature Range Notes:
Maximum Ratings and Electrical Characteristics
Symbol VRRM VRMS VDC I(AV) IFSM VF IR Cj
RθJC TJ TSTG
.245(6.22) .220(5.59)
SK 102
SK 103
SK 104
SK 105
SK 106
SK 109
SK SK 1010 1020
Units
20 14 20
30 21 30
40 28 40
50 35 50
60 42 60 10.0 150
90 63 90
100 200 V 70 140 V 100 200 V A A
0.55
0.7
0.5 15 400 10 300 4.0
0.85 0.1
0.95
5.0 250
-65 to +125 -65 to +150 -65 to +150
V mA mA pF o C/W o C o C
1. Thermal Resistance from Junction to Case Per Leg WITH Heat sink (2”x3”x0.25”) Al-plate. 2. Measured at 1MHz and Applied Reverse Voltage of 4.0V D.C.
Page 1/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/
SK102 thru SK1020
®
RATINGS AND CHARACTERISTIC CURVES(SK102 thru SK1020)
FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE
10
AVERAGE FORWARD CURRENT. (A) PEAK FORWARD SURGE CURRENT. (A)
175 150
FIG.2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
8.3ms Single Half Sine Wave JEDEC Method
8
SK102-SK104
SK105-SK1020
125 100 75 50
6
4
2 25 0 0 50 100 o CASE TEMPERATURE. ( C) 150 1 2 5 10 20 NUMBER OF CYCLES AT 60Hz 50 100
FIG.4- TYPICAL REVERSE CHARACTERISTICS FIG.3- TYPICAL FORWARD CHARACTERISTICS
50
K1 04
10
INSTANTANEOUS FORWARD CURRENT. (A)
10
910 SK
SK
1
INSTANTANEOUS REVERSE CURRENT. (mA)
SK
10
S 2-
10 SK
5-
SK
10
6
0 01
5 Tj=12
1
0
C
SK
10
20
Tj=750C
0.1
1 Tj=25oC Pulse Width=300 s 1% Duty Cycle
Tj=25 0C
0.01
0.001 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 FORWARD VOLTAGE. (V) 0
MBRD820-MBRD8100 MBRD8150
20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.5- TYPICAL JUNCTION CAPACITANCE
4000 100
FIG.6- TYPICAL TRANSIENT THERMAL CHARACTERISTICS
2000 Tj=25 0C 1000 800 600 400
TRANSIENT THERMAL IMPEDANCE. ( OC/W)
100
JUNCTION CAPACITANCE.(pF)
10
SK SK 10
10
2-S K1
9-S
K1
06
1
200
SK
01
10
0
20
100 0.1 0.4 1 4 10 REVERSE VOLTAGE. (V) 40
0.1 0.01
0.1
1 T, PULSE DURATION. (sec)
10
100
Page 2/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/
.