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MUR1005D Dataheets PDF



Part Number MUR1005D
Manufacturers Thinki Semiconductor
Logo Thinki Semiconductor
Description (MUR1005 - MUR1060) 10.0 Ampere Heatsink Glass Passivated Ultra Fast Recovery Rectifier
Datasheet MUR1005D DatasheetMUR1005D Datasheet (PDF)

MUR1005 thru MUR1060 Pb ® Pb Free Plating Product MUR1005 thru MUR1060 TO-220AB .419(10.66) .387(9.85) .139(3.55) MIN 10.0 Ampere Heatsink Glass Passivated Ultra Fast Recovery Rectifier Features ¬ Fast switching for high efficiency ¬ Low forward voltage drop ¬ High current capability ¬ Low reverse leakage current ¬ High surge current capability Mechanical Data ¬ Case:TO-220AB Heatsink Package ¬ Epoxy: UL 94V-0 rate flame retardant ¬ Terminals: Solderable per MIL-STD-202 method 208 ¬ Polarit.

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MUR1005 thru MUR1060 Pb ® Pb Free Plating Product MUR1005 thru MUR1060 TO-220AB .419(10.66) .387(9.85) .139(3.55) MIN 10.0 Ampere Heatsink Glass Passivated Ultra Fast Recovery Rectifier Features ¬ Fast switching for high efficiency ¬ Low forward voltage drop ¬ High current capability ¬ Low reverse leakage current ¬ High surge current capability Mechanical Data ¬ Case:TO-220AB Heatsink Package ¬ Epoxy: UL 94V-0 rate flame retardant ¬ Terminals: Solderable per MIL-STD-202 method 208 ¬ Polarity:As marked on diode body ¬ Mounting position: Any ¬ Weight: 2.24 grams Unit : inch (mm) .196(5.00) .163(4.16) .054(1.39) .045(1.15) .269(6.85) .226(5.75) .624(15.87) .50(12.7)MIN .038(0.96) .019(0.50) .177(4.5)MAX .548(13.93) .025(0.65)MAX .1(2.54) .1(2.54) Case Case Case Case Negative Positive Common Cathode Common Anode Suffix "CT" Suffix "N" Doubler Suffix "D" Reverse Doubler Suffix "E" MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25oC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. COMMON CATHODE POLARITY COMMON ANODE POLARITY DOUBLER POLARITY REVERSE POLARITY SUFFIX "CT" SUFFIX "N" SUFFIX "D" SUFFIX "E" MUR1005CT MUR1010CT MUR1020CT MUR1030CT MUR1040CT MUR1060CT SYMBOL VRRM VRMS VDC IF(AV) MUR1005N MUR1005D MUR1005E MUR1010N MUR1010D MUR1010E MUR1020N MUR1020D MUR1020E MUR1030N MUR1030D MUR1030E MUR1040N MUR1060N MUR1040D MUR1040E MUR1060D MUR1060E UNIT V V V A Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current TC=100 C Peak Forward Surge Current, 8.3ms single Half sine-wave superimposed on rated load (JEDEC method) Maximum Instantaneous Forward Voltage @ 5.0 A Maximum DC Reverse Current @TJ=25 C At Rated DC Blocking Voltage @TJ=125 C Maximum Reverse Recovery Time (Note 1) Typical junction Capacitance (Note 2) Typical Thermal Resistance (Note 3) Operating Junction and Storage Temperature Range o o o 50 35 50 100 70 100 200 140 200 10.0 300 210 300 400 280 400 600 420 600 IFSM 100 A VF IR Trr CJ R JC TJ, TSTG 0.98 10.0 250 35 65 2.2 -55 to +150 1.3 1.7 V uA uA nS pF o CW o C NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A. (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. (3) Thermal Resistance junction to case. Page 1/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Free Datasheet http://www.datasheet4u.com/ MUR1005 thru MUR1060 ® FIG.1 - FORWARD CURRENT DERATING CURVE 10 100 FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method) AVERAGE FORWARD RECTIFIED CURRENT, AMPERES 8 80 6 60 4 40 2 60 Hz Resistive or Inductive load 0 0 50 100 o 20 0 150 1 10 100 CASE TEMPERATURE, C NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS IINSTANTANEOUS FORWARD CURRENT, AMPERES 100 FIG.4 - TYPICAL REVERSE CHARACTERISTICS 1000 INSTANTANEOUS REVERSE CURRENT, MICROAMPERES MUR1005-MUR1020 10 100 TJ=125 C o MUR1030-MUR1040 1 MUR1060 10 TJ=25 C 1 o 0.1 0.2 0.4 0.6 0.8 TJ=25 C PULSE WIDTH=300uS 1% DUTY CYCLE 1.0 1.2 1.4 1.6 o 0.1 0 20 40 60 80 100 INSTANTANEOUS FORWARD VOLTAGE, VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE,% FIG.5 - TYPICAL JUNCTION CAPACITANCE 1000 JUNCTION CAPACITANCE, pF TJ = 25 C f = 1.0 MHZ Vsig = 50mVp-p o 100 10 0.1 1.0 4.0 10 100 REVERSE VOLTAGE, VOLTS Page 2/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Free Datasheet http://www.datasheet4u.com/ .


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