Document
MUR1605 thru MUR1660
®
Pb
Pb Free Plating Product
MUR1605 thru MUR1660
TO-220AB
.419(10.66) .387(9.85) .139(3.55) MIN
16.0 Ampere Glass Passivated Junction Ultrafast Recovery Rectifiers
Features Fast switching for high efficiency Low forward voltage drop High current capability Low reverse leakage current High surge current capability
Application
Unit : inch (mm)
.196(5.00) .163(4.16) .054(1.39) .045(1.15)
.269(6.85) .226(5.75)
.624(15.87) .50(12.7)MIN
Mechanical Data Case: Molded plastic TO-220AB Heatsink Epoxy: UL 94V-0 rate flame retardant Terminals: Solderable per MIL-STD-202 method 208 Polarity:As marked on diode body Mounting position: Any Weight: 2.03 grams
.038(0.96) .019(0.50)
.177(4.5)MAX
Automotive Environment|DC Motor Control Plating Power Supply|UPS Amplifier and Sound Device System etc..
.548(13.93)
.025(0.65)MAX
.1(2.54)
.1(2.54)
Case
Case
Case
Positive Common Cathode Suffix "CT"
Negative Common Anode Suffix "CA"
Doubler Series Connection Suffix "GD"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25oC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Common Cathode Suffix "CT" Common Anode Suffix "CA" Anode and Cathode Coexistence Suffix "GD"
MUR1605CT MUR1610CT MUR1620CT MUR1630CT MUR1640CT MUR1660CT
SYMBOL VRRM VRMS VDC IF(AV)
MUR1605CA MUR1610CA MUR1620CA MUR1630CA MUR1640CA MUR1660CA UNIT MUR1605GD MUR1610GD MUR1620GD MUR1630GD MUR1640GD MUR1660GD
Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current TC=100 C Peak Forward Surge Current, 8.3ms single Half sine-wave superimposed on rated load (JEDEC method) Maximum Instantaneous Forward Voltage @ 8.0 A Maximum DC Reverse Current @TJ=25 C At Rated DC Blocking Voltage @TJ=125 C Maximum Reverse Recovery Time (Note 1) Typical junction Capacitance (Note 2) Typical Thermal Resistance (Note 3) Operating Junction and Storage Temperature Range
o o o
50 35 50
100 70 100
200 140 200 16.0
300 210 300
400 280 400
600 420 600
V V V A
IFSM
175
150
A
VF
0.98 10.0 250 35 90 2.2 -55 to + 150
1.3
1.7
V uA uA nS pF
o
IR Trr CJ R JC TJ, TSTG
CW
o
C
NOTES : (1) Reverse recovery test conditions IF = 0.5A, I R = 1.0A, Irr = 0.25A. (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. (3) Thermal Resistance junction to case.
Page 1/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/
MUR1605 thru MUR1660
®
FIG.1 - FORWARD CURRENT DERATING CURVE
16
FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT
200
PEAK FORWARD SURGE CURRENT, AMPERES
AVERAGE FORWARD RECTIFIED CURRENT, AMPERES
13
175 150 125 100 75 50 25 0
Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method)
10
8
6
4 60 Hz Resistive or Inductive load 0 0 50 100
o
150
1
10
100
CASE TEMPERATURE, C
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS
IINSTANTANEOUS FORWARD CURRENT, AMPERES
10
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
1000
MUR1605-MUR1620
INSTANTANEOUS REVERSE CURRENT, MICROAMPERES
MUR1630-MUR1640
100
TJ=125 C
o
1.0
MUR1660
10 TJ=25 C 1
o
0.1
0.01 0.2 0.4 0.6 0.8
TJ=25 C PULSE WIDTH=300uS 1% DUTY CYCLE 1.0 1.2 1.4 1.6
o
0.1 0 20 40 60 80 100
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
JUNCTION CAPACITANCE, pF
TJ = 25 C f = 1.0 MHZ Vsig = 50mVp-p
o
100
10 0.1 1.0 4.0 10 100
REVERSE VOLTAGE, VOLTS
Page 2/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/
.