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CDBER0230R

Comchip

SMD Schottky Barrier Diode

SMD Schottky Barrier Diode SMD Diodes Specialist CDBER0230R (RoHS Device) Io = 200 mA V R = 30 Volts 0503(1308) 0.053(1...


Comchip

CDBER0230R

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SMD Schottky Barrier Diode SMD Diodes Specialist CDBER0230R (RoHS Device) Io = 200 mA V R = 30 Volts 0503(1308) 0.053(1.35) 0.045(1.15) Features Low reverse current. Designed for mounting on small surface. Extremely thin / leadless package. Majority carrier conduction. 0.034(0.85) 0.026(0.65) Mechanical data 0.030(0.75) Case: 0503(1308) standard package, molded plastic. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Marking code: cathode band & BB Mounting position: Any Weight: 0.002 gram(approx.). 0.022(0.55) Typ. 0.024(0.60) 0.016(0.40) Typ. Dimensions in inches and (millimeter) Maximum Rating (at T A =25 C unless otherwise noted) O Parameter Repetitive peak reverse voltage Reverse voltage Average forward current Forward current,surge peak Storage temperature Junction temperature Conditions Symbol Min Typ Max Unit V RRM VR IO 35 30 200 V V mA 8.3ms single half sine-wave superimposed on rate load(JEDEC method) I FSM T STG Tj -40 1 +125 +125 A O C C O Electrical Characteristics (at T A =25 C unless otherwise noted) O Parameter Forward voltage Reverse current I F = 200 mA V R = 10 V Conditions Symbol Min Typ Max Unit VF IR 0.6 1 V uA REV:A QW-A1100 Page 1 Comchip Technology CO., LTD. Free Datasheet http://www.datasheet4u.com/ SMD Schottky Barrier Diode SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CDBER0230R) Fig. 1 - Forward characteristics 1000 1m 125 C O Fig. 2 - Reverse characteristics Forward current (mA ) 100 Rev...




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