TB0720H

LITE-ON SEMICONDUCTOR TB0640H thru TB3500H Bi-Directional VDRM IPP - 58 to 320 Volts - 100 Amperes SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE FEATURES Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 100A @ 10/1000us or 400 @ 8/20us High off state Impedance and low on state voltage Plastic material has UL flammability classification 94V-0 SMB SMB A DIM. A B B C C D E MIN. 4.06 3.30 1.96 0.15 5.21 0.05 2.01 0.76 MAX. 4.57 3.94 2.21 0.31 5.59 0.20 2.62 1.52 MECHANICAL DATA Case : Molded plastic Polarity : Denotes none cathode band Weight : 0.093 grams G H E F D F G H All Dimensions in millimeter MAXIMUM RATINGS CHARACTERISTICS Non-repetitive peak impulse current @ 10/1000us Non-repetitive peak On-state current @ 8.3ms (one half cycle) Junction temperature range storage temperature range SYMBOL VALUE UNIT A A ℃ ℃ IPP ITSM TJ TSTG 100 50 -40 to +150 -55 to +150 THERMAL RESISTANCE CHARACTERISTICS Junction to leads Junction to ambient on print circuit (on recommended pad layout) Typical positive temperature coefficient for brekdown voltage SYMBOL VALUE UNIT ℃ /W ℃ /W %/℃ Rth(J-L) Rth(J-A) △ VBR/△ TJ 20 100 0.1 MAXIMUM RATED SURGE WAVEFORM WAVEFORM 2/10 us 8/20 us 10/160 us 10/700 us 10/560 us 10/1000 us STANDARD GR-1089-CORE IEC 61000-4-5 FCC Part 68 ITU-T K20/21 FCC Part 68 GR-1089-CORE IPP (A) 500 400 250 200 160 100 IPP, PEAK PULSE CURRENT (%) 100 Peak value (Ipp) tr= rise time to peak value tp= Decay time...