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35N15E

Motorola
Part Number 35N15E
Manufacturer Motorola
Description MTW35N15E
Published Dec 22, 2013
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTW35N15E/D Designer's TMOS E-FET .™ Power Field Effect...
Datasheet PDF File 35N15E PDF File

35N15E
35N15E

Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTW35N15E/D Designer's TMOS E-FET .
™ Power Field Effect Transistor TO-247 with Isolated Mounting Hole N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a drain–to–source diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpect...


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