ST2SA733

ST 2SA733 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups, R, O, Y, P and L, according to its DC current gain. As complementary type the NPN transistor ST 2SC945 is recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 oC) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range -VCBO -VCEO -VEBO -IC Ptot Tj TS Value 60 50 5 150 250 150 -55 to +150 Unit V V V mA mW O O C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 12/07/2002 Free Datasheet http://www.datasheet4u.com/ ST 2SA733 Characteristics at Tamb=25 oC Symbol DC Current Gain at -VCE=6V, -IC=1mA Current Gain Group R O Y P L Collector Base Breakdown Voltage at -IC=100μA Collector Emitter Breakdown Voltage at -IC=10mA Emitter Base Breakdown Voltage at -IE=10μA Collector Cutoff Current at -VCB=60V Emitter Cutoff Current at -VEB=5V Collector Saturation Voltage at -IC=100mA, -IB=10mA Base Emitter Voltage at -VCE=6V, -IC=1mA Gain Bandwidth Product at -VCE=6V, -IC=10mA Output Capacitance at -VCB=10V, f=1MHz Noise Figure at -VCE=6V, -IC=0.3mA at f=100Hz, RS=10KΩ F 6 20 dB COB 2.8 pF fT 50 180 MHz -VBE(o...