SIA413DJ

SiA413DJ Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 0.029 at VGS = - 4.5 V - 12 0.034 at VGS = - 2.5 V 0.044 at VGS = - 1.8 V 0.100 at VGS = - 1.5 V ID (A) - 12a - 12a - 12a -3 23 nC Qg (Typ.) TrenchFET® Power MOSFET New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PowerPAK SC-70-6L-Single APPLICATIONS 1 D 2 D 3 6 D 5 D S 4 S 2.05 mm G S Load Switch, PA Switch and Battery Switch for Portable Devices Marking Code BFX Part # code XXX Lot Traceability and Date code G 2.05 mm Ordering Information: SiA413DJ-T4-GE3 (Lead (Pb)-free and Halogen-free) SiA413DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS Limit - 12 ±8 - 12a - 12a - 10b, c - 8b, c - 40 - 12a - 2.9b, c 19 12 3.5b, c 2.2b, c - 55 to 150 260 Unit V A Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation PD TJ, Tstg W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e °C THERMAL RESISTANCE RATINGS Symbol Typical Maximum Unit RthJA t5s 28 36 Maximum...