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SQJ460EP Dataheets PDF



Part Number SQJ460EP
Manufacturers Vishay
Logo Vishay
Description Automotive N-Channel MOSFET
Datasheet SQJ460EP DatasheetSQJ460EP Datasheet (PDF)

SQJ460EP www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration PowerPAK® SO-8L Single FEATURES 60 0.0096 0.0120 32 Single D • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC m 5m 6.1 5.1 3m m G D 4 G S 3 S 2 S 1 S N-Channel MOSFET ORDERING INFORMATI.

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SQJ460EP www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration PowerPAK® SO-8L Single FEATURES 60 0.0096 0.0120 32 Single D • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC m 5m 6.1 5.1 3m m G D 4 G S 3 S 2 S 1 S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free PowerPAK SO-8L SQJ460EP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)e, f L = 0.1 mH TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C SYMBOL VDS VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT 60 ± 20 32 32 32 128 38 72 83 27 - 55 to + 175 260 mJ W °C A UNIT V THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mountc SYMBOL RthJA RthJC LIMIT 65 1.8 UNIT °C/W Notes a. Package limited. b. Pulse test; pulse width  300 μs, duty cycle  2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. e. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. S11-1363-Rev. A, 18-Jul-11 1 Document Number: 67034 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Free Datasheet http://www.datasheet4u.com/ SQJ460EP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VDS VGS(th) IGSS IDSS ID(on) VGS = 0, ID = 250 μA VDS = VGS, ID = 250 μA VDS = 0 V, VGS = ± 20 V VGS = 0 V VGS = 0 V VGS = 0 V VGS = 10 V VGS = 10 V Drain-Source On-State Resistancea RDS(on) VGS = 10 V VGS = 10 V VGS = 4.5 V Forward Transconductanceb gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf Characteristicsb ISM VSD IF = 10 A, VGS = 0 0.8 128 1.2 A V VDD = 30 V, RL = 30  ID  1 A, VGEN = 10 V, Rg = 1  f = 1 MHz VGS = 10 V VDS = 30 V, ID = 18 A VGS = 0 V VDS = 25 V, f = 1 MHz Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and Pulsed Currenta Forward Voltage 1 3836 393 188 71 9.7 12.5 2.1 12 11 56 25 4795 495 235 106 3.2 18 17 84 32 ns  nC pF VDS = 60 V VDS = 60 V, TJ = 125 °C VDS = 60 V, TJ = 175 °C VDS5 V ID = 18 A ID = 18 A, TJ = 125 °C ID = 18 A, TJ = 175 °C ID = 15 A 60 1.5 30 2.0 0.0083 0.0101 60 2.5 ± 100 1 50 150 0.0096 0.0162 0.0200 0.0120 S  A μA V nA SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS = 15 V, ID = 15 A Notes g. Pulse test; pulse width  300 μs, duty cycle  2 %. h. Guaranteed by design, not subject to production testing. i. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S11-1363-Rev. A, 18-Jul-11 2 Document Number: 67034 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Free Datasheet http://www.datasheet4u.com/ SQJ460EP www.vishay.com TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 40 VGS = 10 V thru 4 V 32 ID - Drain Current (A) ID - Drain Current (A) Vishay Siliconix 40 32 24 24 16 16 TC = 25 °C 8 VGS = 3 V 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) 8 TC = 125 °C TC = - 55 °C 0 0 1 2 3 4 VGS - Gate-to-Source Voltage (V) 5 Output Characteristics 1.0 100 Transfer Characteristics 0.8 80 gfs - Transconductance (S) TC = - 55 °C TC = 25 °C ID - Drain Current (A) 0.6 60 0.4 TC = 25 °C 0.2 TC = 125 °C TC = - 55 °C 0.0 0 1 2 3 4 VGS - Gate-to-Source Voltage (V) 5 .


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