BSB028N06NN3G

BSB028N06NN3 G OptiMOS™3 Power-MOSFET Features Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) Superior thermal resistance Dual sided cooling low parasitic inductance Product Summary VDS RDS(on),max ID 60 2.8 90 CanPAKTM M MG-WDSON-2 Low profile (<0.7mm) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Compatible with DirectFET® package MN footprint and outline2) V mW A Type BSB028N06NN3 G Package MG-WDSON-2 Outline MN Marking 0106 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Continuous drain current I D V GS=10 V, T C=25 °C 90 V GS=10 V, T C=100 °C 85 V GS=10 V, T A=25 °C, R thJA=58 K/W2) 22 Pulsed drain current3) I D,pulse T C=25 °C 360 Avalanche energy, single pulse E AS I D=30 A, R GS=25 W 590 Gate source voltage V GS ±20 1) J-STD20 and JESD22 2) DirectFET® is a trademark of International Rectfier Corporation BSB028N06NN3 G uses DirectFET® technology licensed from International Rectifier Corporation Unit A mJ V Rev. 2.0 page 1 2014-04-17 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Power dissipation P tot T C=25 °C T A=25 °C, R thJA=58 K/W2) Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 BSB028N06NN3 G Value 78 2.2 -40 ... 150 55/150/56 Unit W °C Paramete...