Document
BSB024N03LX G
OptiMOSTM2 Power-MOSFET
Features • Pb-free plating; RoHS compliant • Dual sided cooling • Low profile (<0.7 mm) • 100% avalanche tested • Qualified for consumer level application • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Optimized for high switching frequency DC/DC converter • Low parasitic inductance
Product Summary V DS R DS(on),max ID 30 2.4 145 V mΩ A
MG-WDSON-2
• Compatible with DirectFET® package MX footprint and outline 1)
Type BSB024N03LX G
Package MG-WDSON-2
Outline MX
Marking 0603
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=10 V, T A=25 °C, R thJA=45 K/W 2) Pulsed drain current3) Avalanche current, single pulse 4) Avalanche energy, single pulse Gate source voltage I D,pulse I AS E AS V GS T C=25 °C T C=25 °C I D=50 A, R GS=25 Ω Value 145 92 27 400 50 220 ±20 mJ V Unit A
1) CanPAKTM uses DirectFET ® technology licensed from International Rectifier Corporation. DirectFET® is a registered trademark of International Rectifier Corporation.
Rev. 2.0
page 1
2009-05-11
Free Datasheet http://www.datasheet4u.com/
BSB024N03LX G
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Power dissipation Symbol Conditions P tot T C=25 °C T A=25 °C, R thJA=45 K/W 2) Operating and storage temperature IEC climatic category; DIN IEC 68-1 T j, T stg Value 78 2.8 -40 ... 150 55/150/56 °C Unit W
Parameter
Symbol Conditions min.
Values typ. max.
Unit
Thermal characteristics Thermal resistance, junction - case R thJC bottom top Device on PCB R thJA 6 cm2 cooling area2) 1.0 1.6 45 K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=250 µA V DS=30 V, V GS=0 V, T j=25 °C V DS=30 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=4.5 V, I D=25 A V GS=10 V, I D=30 A Gate resistance Transconductance
2)
30 1 -
0.1
2.2 1
V
µA
-
10 10 3.4 2.0 0.6 100
100 100 4.2 2.4 Ω S nA mΩ
RG g fs |V DS|>2|I D|R DS(on)max, I D=30 A
50
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. See figure 3 for more detailed information
3)
Rev. 2.0
page 2
2009-05-11
Free Datasheet http://www.datasheet4u.com/
BSB024N03LX G
Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 5) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Gate charge total Q gs Q g(th) Q gd Q sw Qg V plateau Qg V DD=15 V, I D=30 A, V GS=0 to 10 V V DS=0.1 V, V GS=0 to 4.5 V V DD=15 V, V GS=0 V V DD=15 V, I D=30 A, V GS=0 to 4.5 V 14 7.9 9.6 16 35 2.9 72 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=15 V, V GS=10 V, I D=30 A, R G=1.6 Ω V GS=0 V, V DS=15 V, f =1 MHz 4900 1700 220 8.4 7.0 35 5.6 ns pF Values typ. max. Unit
Gate charge total, sync. FET Output charge Reverse Diode Diode continuous forward current Diode pulse current Diode forward voltage
Q g(sync) Q oss
-
30 39
-
nC
IS I S,pulse V SD
T C=25 °C V GS=0 V, I F=30 A, T j=25 °C V R=15 V, I F=I S, di F/dt =400 A/µs
-
0.79
78 400 -
A
V
Reverse recovery charge
4) 5)
Q rr
-
-
50
nC
See figure 13 for more detailed information See figure 16 for gate charge parameter definition
Rev. 2.0
page 3
2009-05-11
Free Datasheet http://www.datasheet4u.com/
BSB024N03LX G
1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS≥10 V
90 80 70 60
160
120
P tot [W]
I D [A]
0 40 80 120 160
50 40 30 20 10 0
80
40
0 0 40 80 120 160
T C [°C]
T C [°C]
3 Safe operating area I D=f(V DS); T C=25 °C; D =0 parameter: t p
103
limited by on-state resistance 1 µs 10 µs
4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T
101
102
100 µs
100
0.5
I D [A]
1 ms
Z thJC [K/W]
DC
0.2 0.1 0.05 0.02 0.01 single pulse
101
10 ms
10-1
100
10-2
10-1 10
-1
10-3 10
0
10
1
10
2
10-6
10-5
10-4
10-3
10-2
10-1
100
V DS [V]
t p [s]
Rev. 2.0
page 4
2009-05-11
Free Datasheet http://www.datasheet4u.com/
BSB024N03LX G
5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS
6 560
3.2 V
5 480
5V 4.5 V 3.5 V
400
4
R DS(on) [mΩ ]
I D [A]
320
10 V
4V
4V
3
4.5 V 5V
240
2 160
3.5 V 3.2 V 3V 2.8 V
10 V
1
80
0 0 1 2 3
0 0 10 20 30 40 50
V DS [V]
I D [A]
7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j
400
8 Typ. forward transconductance g fs=f(I D); T j=2.