IPB50R199CP

CoolMOSTM Power Transistor Features Lowest figure of merit RON x Qg Ultra low gate charge Extreme dv/dt rated High peak current capability Pb-free lead plating; RoHS compliant Quailfied according to JEDEC1) for target applications Product Summary V DS @Tjmax R DS(on),max Q g,typ IPB50R199CP 550 V 0.199 Ω 34 nC PG-TO263 CoolMOS CP is designed for: Hard & soft switching SMPS topologies CCM PFC for ATX, Notebook adapter, PDP and LCD TV PWM for ATX, Notebook adapter, PDP and LCD TV Type IPB50R199CP Package PG-TO263 Marking 5R199P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T C=25 °C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t 2),3) AR Avalanche current, repetitive t 2),3) AR MOSFET dv /dt ruggedness I D,pulse E AS E AR I AR dv /dt T C=100 °C T C=25 °C I D=6.6 A, V DD=50 V I D=6.6 A, V DD=50 V V DS=0...400 V Gate source voltage V GS static AC (f>1 Hz) Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg Rev. 2.0 page 1 Value 17 11 40 436 0.66 6.6 50 ±20 ±30 139 -55 ... 150 Unit A mJ A V/ns V W °C 2007-11-20 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous diode forward current Diode pulse current2) Reverse diode dv /dt 4) IS I S,pulse dv /dt T C=25 °C IPB50R199CP Value 9.9 40 15 Unit A V/ns Parameter Symbol Conditions min. Value...