IPB50R299CP

IPB50R299CP CoolMOSTM Power Transistor Features Lowest figure of merit RON x Qg Ultra low gate charge Extreme dv/dt rated High peak current capability Pb-free lead plating; RoHS compliant Quailfied according to JEDEC1) for target applications Product Summary V DS @Tjmax R DS(on),max Q g,typ 550 0.299 23 V Ω nC PG-TO263 CoolMOS CP is designed for: Hard- & Softswitching SMPS topologies CCM PFC for Notebook adapter, PDP and large LCD power supplies PWM for Notebook adapter, PDP and large LCD power supplies Type IPB50R299CP Package PG-TO263 Marking 5R299P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t AR2),3) Avalanche current, repetitive t AR2),3) MOSFET dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V DS=0...400 V static AC (f>1 Hz) Power dissipation Operating and storage temperature P tot T j, T stg T C=25 °C T C=25 °C I D=4.4 A, V DD=50 V I D=4.4 A, V DD=50 V Value 12 8 26 289 0.44 4.4 50 ±20 ±30 104 -55 ... 150 W °C A V/ns V mJ Unit A Rev. 2.1 page 1 2009-02-23 Free Datasheet http://www.datasheet4u.com/ IPB50R299CP Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current 2) Reverse diode d v /dt 4) Symbol Conditions IS I S,pulse dv /dt T C=25 °C Value 6.6 26 15 V/ns Unit A Parameter Sym...