IPP80N03S4L-04

IPB80N03S4L-03 IPI80N03S4L-04, IPP80N03S4L-04 OptiMOS®-T2 Power-Transistor Product Summary V DS R DS(on),max (SMD version) ID 30 3.4 80 V mΩ A Features N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green product (RoHS compliant) 100% Avalanche tested PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB80N03S4L-03 IPI80N03S4L-04 IPP80N03S4L-04 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4N03L03 4N03L04 4N03L04 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS I AS V GS P tot T j, T stg T C=25 °C I D=80 A T C=25 °C T C=25 °C Value 80 80 320 95 80 ±16 94 -55 ... +175 55/175/56 mJ A V W °C Unit A Rev. 2.1 page 1 2010-03-08 Free Datasheet http://www.datasheet4u.com/ IPB80N03S4L-03 IPI80N03S4L-04, IPP80N03S4L-04 Parameter Symbol Conditions min. Thermal characteristics2) Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R thJC R thJA R thJA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold ...