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MBR20T100CT

Vishay

High Performance Schottky Generation

MBR20T100CT Vishay High Power Products High Performance Schottky Generation 5.0, 2 x 10 A FEATURES Base 2 common cathod...


Vishay

MBR20T100CT

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MBR20T100CT Vishay High Power Products High Performance Schottky Generation 5.0, 2 x 10 A FEATURES Base 2 common cathode Anode TO-220AB Anode 2 1 Common 3 cathode 175 °C high performance Schottky diode Very low forward voltage drop Extremely low reverse leakage Optimized VF vs. IR trade off for high efficiency Increased ruggedness for reverse avalanche capability RBSOA available Negligible switching losses Submicron trench technology Full lead (Pb)-free and RoHS compliant devices Designed and qualified for industrial level APPLICATIONS PRODUCT SUMMARY IF(AV) VR VF at 10 A at 125 °C 2 x 10 A 100 V 0.68 V High efficiency SMPS Automotive High frequency switching Output rectification Reverse battery protection Freewheeling Dc-to-dc systems Increased power density systems MAJOR RATINGS AND CHARACTERISTICS SYMBOL VRRM VF TJ 10 Apk, TJ = 125 °C (typical, per leg) Range CHARACTERISTICS VALUES 100 0.62 - 55 to 175 UNITS V °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage SYMBOL VR TEST CONDITIONS TJ = 25 °C MBR20T100CT 100 UNITS V ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current per leg per device SYMBOL IF(AV) TEST CONDITIONS 50 % duty cycle at TC = 159 °C, rectangular waveform 5 µs sine or 3 µs rect. pulse IFSM 10 ms sine or 6 ms rect. pulse EAS IAR TJ = 25 °C, IAS = 3 A, L = 12 mH Limited by frequency of operation and time pulse duration so that TJ < TJ max. IAS at TJ max. as a function of time pulse See fig. 8...




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