DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA2790GR
SWITCHING N- AND P-CHANNEL POWER MOS FET
DESCRIPTION
The µ PA2790GR...
DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
µ PA2790GR
SWITCHING N- AND P-CHANNEL POWER MOS FET
DESCRIPTION
The µ PA2790GR is N- and P-channel MOS Field Effect
Transistors designed for Motor Drive application.
8
PACKAGE DRAWING (Unit: mm)
5
N-channel 1 : Source 1 2 : Gate 1 7, 8 : Drain 1 P-channel 3 : Source 2 4 : Gate 2 5, 6 : Drain 2 6.0 ±0.3
FEATURES
Low on-state resistance N-channel RDS(on)1 = 28 mΩ MAX. (VGS = 10 V, ID = 3 A)
1.8 Max.
RDS(on)2 = 40 mΩ MAX. (VGS = 4.5 V, ID = 3 A) P-channel RDS(on)1 = 60 mΩ MAX. (VGS = −10 V, ID = −3 A) RDS(on)2 = 80 mΩ MAX. (VGS = −4.5 V, ID = −3 A) Low input capacitance N-channel Ciss = 500 pF TYP. P-channel Ciss = 460 pF TYP.
1
4
+0.05 –0.10
5.37 Max.
4.0
1.0
0.20
0.10 Min.
0.6 1.27 0.12 M 0.40 +0.11 –0.05
0.5 ±0.2
0.10
Built-in gate protection diode Small and surface mount package (Power SOP8)
EQUIVALENT CIRCUITS
N-channel
Drain
P-channel
Drain
ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
Gate Protection Diode Source Gate
Body Diode
Gate
Body Diode
µ PA2790GR
Gate Protection Diode
Source
Remark The diode connected between the gate and source of the
transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
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